Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials
M.B. Das(Pennsylvania State University), Saptarshi Das(Pennsylvania State University), Alexander Sredenschek(Pennsylvania State University), Kalaiarasan Meganathan(University of Chemistry and Technology, Prague), Najam U Sakib(Pennsylvania State University), Zhuohang Yu(Pennsylvania State University), Shiva Subbulakshmi Radhakrishnan(Pennsylvania State University), Muhtasim Ul Karim Sadaf(Pennsylvania State University), Dipanjan Sen(Pennsylvania State University), Mauricio Terrones(Pennsylvania State University), Kalyan Jyoti Sarkar(University of Chemistry and Technology, Prague), David Sánchez(Pennsylvania State University), Zdeněk Sofer(University of Chemistry and Technology, Prague), Pranavram Venkatram(Pennsylvania State University), Yang Yang(Pennsylvania State University), Zhiyu Zhang(Pennsylvania State University), Ying Han(Pennsylvania State University), Subir Ghosh(Pennsylvania State University), Harikrishnan Ravichandran(Pennsylvania State University), Andrew Pannone(Pennsylvania State University), Yongwen Sun(Pennsylvania State University), Divya Somvanshi(Harcourt Butler Technical University)
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