Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors
Zheng Han(Shanxi University), Valentin Crépel(Flatiron Health (United States)), Nicolas Regnault(Princeton University), Rui Zhou(Southern University of Science and Technology), Guangli Kuang(Chinese Academy of Sciences), Tongyao Zhang(Shanxi University), Takashi Taniguchi(National Institute for Materials Science), Kenji Watanabe(National Institute for Materials Science), Chuanying Xi(Chinese Academy of Sciences), Xiangyan Han(Peking University), Jianming Lü(Jiangsu University), Zhaosheng Wang(Liaoning Technical University), Xingguang Wu(China University of Petroleum, Beijing), Jun Luo(Tongji University), Zhiren Xiong(Shanxi University), Benjamin Sacépé(Université Joseph Fourier), Ning Wang(Zhejiang Lab), Zhengyu Li(Chinese Academy of Sciences), Hanwen Wang(Liaoning Academy of Materials), Jing Zhang(Shanxi University), Jie Yang(Jiangsu University), Qinxin Shen(Chinese Academy of Sciences), Senyang Pan(Chinese Academy of Sciences), Jinqiang Huang(University of Science and Technology of China)
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