On the origin of anomalous hysteresis in graphite/boron nitride transistors
Dacen Waters(University of Washington), Matthew Yankowitz(University of Washington), Esmeralda Arreguin-Martinez(University of Washington), Kenji Watanabe(National Institute for Materials Science), Jordan Fonseca(National Institute of Standards and Technology), David Cobden(University of Washington), Xiaodong Xu(University of Washington), Ellis Thompson(University of Washington), Thomas Poirier(Kansas State University), James H. Edgar(Kansas State University), Derek Waleffe(University of Washington), Takashi Taniguchi(National Institute for Materials Science)
Cited by 1
Related Papers
Magnetic control of valley pseudospin in monolayer WSe2
|Nature Physics|2015|934
Direct observation of the layer-dependent electronic structure in phosphorene
|Nature Nanotechnology|2016|820