Growth behavior of cristobalite SiO2 coating on 4H–SiC surface via high-temperature oxidation
Moyu Wei(Institute of Semiconductors), Xingfang Liu(Institute of Semiconductors), Jingyi Jiao(Institute of Semiconductors), Yunkai Li(China Agricultural University), Siqi Zhao(Chinese Academy of Sciences), Guoguo Yan(Chinese Academy of Sciences)
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