Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers
Yicheng Pei(Institute of Semiconductors), Xingfang Liu(Institute of Semiconductors), Weilong Yuan(Guangxi University), Ning Guo(Chinese Academy of Sciences), Yunkai Li(China Agricultural University), Xiuhai Zhang(Guangxi University)
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