High-mobility two-dimensional <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>M</mml:mi><mml:msub><mml:mi>A</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>M</mml:mi></mml:math> = Mo, W; <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>A</mml:mi></mml:math> = Si, Ge) family for transistors
Wei-Hua Xiao(Hunan University), Li‐Ming Tang(Hunan University), Gang Ouyang(Hunan Normal University), Ke‐Qiu Chen(Hunan University), Hong-Rui Xu(Hunan Normal University), Kaike Yang(Hunan Normal University), Roberto D’Agosta(Ikerbasque), Guanghui Zhou(Hunan Normal University)
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