Flexible High-Temperature MoS<sub>2</sub> Field-Effect Transistors and Logic Gates
Yixuan Zou(Nanyang Technological University), Zheng You(Beijing Advanced Sciences and Innovation Center), Haojie Zhao(University of Electronic Science and Technology of China), Jiawen Yan(Yantai University), Peng Li(University of Macau), Zekun Zhang(Beijing Advanced Sciences and Innovation Center), Caizhen Su(Beijing Information Science & Technology University)
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