Challenges in Circuits of Nonvolatile Compute-In-Memory for Edge AI Chips
Hung-Hsi Hsu(National Tsing Hua University), Meng‐Fan Chang(Taiwan Semiconductor Manufacturing Company (Taiwan)), De-Qi You(National Tsing Hua University), Ping-Chun Wu(National Tsing Hua University), Tai-Hao Wen(National Tsing Hua University), Ping-Cheng Chen(I-Shou University), Chuan-Jia Jhang(National Tsing Hua University)
Cited by 6
Related Papers
An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices
|2022 IEEE International Solid- State Circuits Conference (ISSCC)|2022|117
A 40-nm, 2M-Cell, 8b-Precision, Hybrid SLC-MLC PCM Computing-in-Memory Macro with 20.5 - 65.0TOPS/W for Tiny-Al Edge Devices
|2022 IEEE International Solid- State Circuits Conference (ISSCC)|2022|117
Fusion of memristor and digital compute-in-memory processing for energy-efficient edge computing
|Science|2024|99
A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W
|Unknown|2023|72
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices
|IEEE Journal of Solid-State Circuits|2022|60