Spin‐Selective Memtransistors with Magnetized Graphene
Juyeong Jeong(Korea Advanced Institute of Science and Technology), Heejun Yang(Sungkyunkwan University), Ruihuan Duan(Nanyang Technological University), Takashi Taniguchi(National Institute for Materials Science), Kenji Watanabe(National Institute for Materials Science), Myung Joon Han(Korea Advanced Institute of Science and Technology), Shoujun Zheng(Beijing Institute of Technology), Zheng Liu(Nanyang Technological University), Dan Guo(Beijing Institute of Technology), Do Hoon Kiem(Korea Advanced Institute of Science and Technology)
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