All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Jiacheng Shi(Northwestern University), Pedram Khalili Amiri(Northwestern University), Mark C. Hersam(Northwestern University), Giovanni Finocchio(University of Messina), J. S. Jiang(Argonne National Laboratory), Vinod K. Sangwan(Northwestern University), Sevdenur Arpaci(Northwestern University), Mario Carpentieri(Polytechnic University of Bari), Charudatta Phatak(Argonne National Laboratory), Mohammad Hamdi(Northwestern University), Can Aygen(Northwestern University), Nicholas Kioussis(California State University, Northridge), M. Grayson(Northwestern University), Jinwoong Kim(California State University, Northridge), Farzad Mahfouzi(California State University, Northridge), Víctor López‐Domínguez(Northwestern University), Jordan Athas(Northwestern University)
Cited by 1
Related Papers
Diverse Applications of Nanomedicine
|ACS Nano|2017|1.3k
The heat equation shrinks embedded plane curves to round points
|Journal of Differential Geometry|1987|1k
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
|Nature Nanotechnology|2014|1k
Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells
|Science|2023|691
GaS and GaSe Ultrathin Layer Transistors
|Advanced Materials|2012|677