A Compact 140-GHz Power Amplifier With 15.4-dBm P<sub>sat</sub> and 14.25% Peaking PAE in 28-nm Bulk CMOS Process
Lei Zhang(Tianjin University), Xuguang Li(Tianjin University), Haipeng Fu(Tianjin University), Kaixue Ma(Tianjin University), Fanyi Meng(Harbin Institute of Technology), Yongqiang Wang(Tianjin University), Keping Wang(Beijing Institute of Technology)
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