Low operating voltage memtransistors based on ion bombarded p‐type <scp>GeSe</scp> nanosheets for artificial synapse applications
Jing Wang(Ministry of Education), Xiangheng Xiao(Wuhan University), Menghua Yang(Jinan University), Hongbo Wang(Southwest Jiaotong University), Rui Chen(Southeast University), Wenqing Li(Institute of High Performance Computing), Qi Zhang(Qiqihar University), Hang Xu(Wuhan University), Xiaoping Ouyang(Zhejiang University), Dong He(Tarim University), Changzhong Jiang(Hunan University)
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