Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices
Sadegh Kamaei(NanoLab (United States)), Adrian M. Ionescu(NanoLab (United States)), Yingfen Wei(École Polytechnique Fédérale de Lausanne), Carlotta Gastaldi(École Polytechnique Fédérale de Lausanne), Juergen Brügger(École Polytechnique Fédérale de Lausanne), Ali Saeidi(École Polytechnique Fédérale de Lausanne), Xia Liu(Ministry of Industry and Information Technology)
Cited by 128
Related Papers
All-in-one self-powered flexible microsystems based on triboelectric nanogenerators
|Nano Energy|2018|293
Recent progress in silk fibroin-based flexible electronics
|Microsystems & Nanoengineering|2021|255
Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
|Solid-State Electronics|2007|224
Delta lake
|Proceedings of the VLDB Endowment|2020|210