Anisotropy and thermal properties in GeTe semiconductor by Raman analysis
Shuai Yang(East China Normal University), Fangyu Yue(East China Normal University), Ruijuan Qi(Chinese Academy of Medical Sciences & Peking Union Medical College), Xiaoyu Feng(King Abdullah University of Science and Technology), Shangwei Dong(East China Normal University), Yucheng Liu(East China Normal University), Pingxiong Yang(East China Normal University), Fengrui Sui(East China Normal University)
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