Gate-tunable multiband transport in ZrTe5 thin devices
Yonghe Liu, Yang Xu(Yangzhou University), Quansheng Wu(Chinese Academy of Sciences), Takashi Taniguchi(National Institute for Materials Science), Kenji Watanabe(National Institute for Materials Science), Hongming Weng(Chinese Academy of Sciences), Qiang Li(Georgia Institute of Technology), Genda Gu(Brookhaven National Laboratory), Yongqing Li(Chinese Academy of Sciences), Hanqi Pi
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