Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Yue Sun(Shanghai University), He Qian(University of Science and Technology of China), Tingying Shen, Xinyi Li(Institute of Microelectronics), Junyi Wang, Yongbo Liu, Shenghua Cheng(Dalian University of Technology), Xiaohu Wang(Hunan Institute of Technology), Bin Gao(Chinese Academy of Sciences)
IEEE Transactions on Electron Devices
January 25, 2023
Cited by 10


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