Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy
Keisuke Minehisa(Hokkaido University), Fumitaro Ishikawa(Ehime University), Mitsuki Yukimune(Ehime University), Ryo Murakami(Ehime University), Kenta Sakaguchi(Ehime University), Kaito Nakama(Hokkaido University), Rikuo Tsutsumi(Ehime University), Takeru Tanigawa(Ehime University), Kazuki Nagashima(The University of Osaka), Akihiro Murayama(Hokkaido University), Takeshi Yanagida(Kyushu University), Hidetoshi Hashimoto(Hokkaido University), Shino Sato(National Institutes for Quantum Science and Technology), Satoshi Hiura(Hokkaido University)
Cited by 15
Related Papers
Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
|Nano Letters|2010|253
Nanostructuration of PEDOT in Porous Coordination Polymers for Tunable Porosity and Conductivity
|Journal of the American Chemical Society|2016|244
Unveiling massive numbers of cancer-related urinary-microRNA candidates via nanowires
|Science Advances|2017|222
Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films
|Physical Review B|2006|157
Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
|Journal of the American Chemical Society|2009|150