Sub-100 nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors With Gate Insulator of 4 nm Atomic-Layer-Deposited AlO<sub>x</sub>
Yuqing Zhang(Fujian Medical University), Shengdong Zhang(Peking University), Yuhang Guan(Peking University), Tengyan Huang(Peking University), Xinwei Wang(Sinopec (China)), Yuhan Zhang(Columbia University), Huan Yang(Peking University), Jiye Li(Henan University of Technology), Jinxiong Li(Peking University), Lei Lü(Peking University), Mansun Chan(Hong Kong University of Science and Technology)
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