Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture
Bo He(Beijing Institute of Technology), Rodrigo Martins(Universidade Nova de Lisboa), Jiangwei Liu(National Institute for Materials Science), Shanshan Jiang(Liaoning University), Gang He(Anhui University of Science and Technology), Elvira Fortunato(Universidade Nova de Lisboa)
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