Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures
Xiao Fu(Dongguk University), Weida Hu(Shanghai Institute of Technical Physics), Jinshui Miao(Shanghai Institute of Technical Physics), Chunhui Hao(University of Chinese Academy of Sciences), Hangyu Xu(Shanghai Institute of Technical Physics), Lei Zhang(Dalian University of Technology), Г. Н. Панин(Institute of Microelectronics Technology and High Purity Materials), Wei Lü(Shanghai Institute of Technical Physics), Kun Zhang(ShanghaiTech University), Qing Li(Chinese Academy of Sciences), Ting He(University of Science and Technology of China), Yue Gu(Shanghai Institute of Technical Physics), Fang Zhong(Shanghai Institute of Technical Physics), Tangxin Li(Shanghai Institute of Technical Physics), Jinjin Wang(Shanghai Institute of Technical Physics), Dejun Fu(Wuhan University of Technology)
Cited by 9
Related Papers
Selective conversion of syngas to light olefins
|Science|2016|1.5k
Photogating in Low Dimensional Photodetectors
|Advanced Science|2017|925
Ultrasensitive and Broadband MoS<sub>2</sub> Photodetector Driven by Ferroelectrics
|Advanced Materials|2015|833
Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
|Science Advances|2017|587
Unipolar barrier photodetectors based on van der Waals heterostructures
|Nature Electronics|2021|575