A steep switching WSe2 impact ionization field-effect transistor

Haeju Choi(Samsung (South Korea)), Sungjoo Lee(Tohoku University), Taeho Kang(Sungkyunkwan University), Hyeonje Son(Sungkyunkwan University), E. H. Hwang(Sungkyunkwan University), Jinshu Li, Jongwook Jeon(Konkuk University), Chanwoo Kang(Sungkyunkwan University)
Nature Communications
October 14, 2022
10.1038/s41467-022-33770-3
Cited by 46

Related Papers

High‐Performance Perovskite–Graphene Hybrid Photodetector
|Advanced Materials|2014|858
Layer-controlled CVD growth of large-area two-dimensional MoS <sub>2</sub> films
|Nanoscale|2014|450
Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic
|Nature Communications|2016|448
Surface group modification and carrier transport properties of layered transition metal carbides (Ti <sub>2</sub> CT <sub>x</sub> , T: –OH, –F and –O)
|Nanoscale|2015|392
Large-Area MXene Electrode Array for Flexible Electronics
|ACS Nano|2019|342