Fully GaN Monolithic Integrated Light Emitting Triode‐on‐Bipolar Junction Transistor Device Drivable with Small Current Signals and Its Frequency Response Characteristic: A Modeling and Simulation Study
Shaokun Hao(Tan Kah Kee Innovation Laboratory), Hengshan Liu, Jie Sun(Tan Kah Kee Innovation Laboratory), Chaoxing Wu(Hanyang University), Jinyu Ye(Zhejiang University of Science and Technology), Qun Yan, Tailiang Guo(Tan Kah Kee Innovation Laboratory), Chenguang Guo(Tan Kah Kee Innovation Laboratory), Yongai Zhang(Fuzhou University), Zhan Fan(San’an Optoelectronics (China)), Xiongtu Zhou(Tan Kah Kee Innovation Laboratory)
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