The Impact of Thermal Enhance Layers on the Relaxation Effect in Analog RRAM

Yue Xi(Tsinghua University), Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), Feng Xu(Tsinghua University), Xinyi Li(Institute of Microelectronics), He Qian(University of Science and Technology of China), Jianshi Tang(Tsinghua University), Yuyao Lu(Fraunhofer Institute for Integrated Circuits), Bin Gao(Chinese Academy of Sciences)
IEEE Transactions on Electron Devices
June 22, 2022
10.1109/ted.2022.3183958
Cited by 29

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