Enhanching memory performance in silicon nitride-based charge trapping memory device with Al<sub>2</sub>O<sub>3</sub> blocking oxide and TiO<sub>2</sub> capping layers
K.M. Sayem Bin Rahmotullah(Pabna University of Science and Technology), Sheikh Rashel Al Ahmed(Pabna University of Science and Technology), Adnan Hosen(Sapienza University of Rome)
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