High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlO<sub>x</sub> Insulator
Jiye Li(Henan University of Technology), Shengdong Zhang(Peking University), Mansun Chan(Hong Kong University of Science and Technology), Xinwei Wang(Sinopec (China)), Jialiang Wang(Peking University), Huan Yang(Peking University), Yuqing Zhang(Fujian Medical University), Lei Lü(Peking University), Xiaoliang Zhou(Peking University)
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