Synergistic hole-doping on ultrathin MoTe2 for highly stable unipolar field-effect transistor
Phuong Huyen Nguyen(Sungkyunkwan University), Mun Seok Jeong(Hanyang University), Hye Min Oh(Institute for Basic Science), Hyung Mo Jeong(Sungkyunkwan University), Hyojung Kim(Sungkyunkwan University), Duc Hieu Nguyen(Dongguk University)
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