Improved resistive switching characteristics of a multi-stacked HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> RRAM structure for neuromorphic and synaptic applications: experimental and computational study

Ejaz Ahmad Khera(International Islamic University Malaysia), SungjunKim(Dongguk University)
RSC Advances
January 1, 2022
Cited by 34


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