Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses
Muhammad Umair Khan(Khalifa University of Science and Technology), Hoi Sing Kwok(University of Hong Kong), Rayyan Ali Shaukat(Jeonbuk National University), Mahesh Y. Chougale(Jeju National University), Qazi Muhammad Saqib(Sivas State Hospital), Moon Hee Kang(Chungbuk National University), Sobia Ali Khan(Chungbuk National University), Jinho Bae(Jeju National University), Jungmin Kim(Jeju National University), Nobuhiko P. Kobayashi(University of California, Santa Cruz), Chaudhry Muhammad Furqan(Hong Kong University of Science and Technology)
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