High-Performance Thin-Film Transistors and Inverters Based on ALD-Derived Ultrathin Al<sub>2</sub>O<sub>3</sub>-Passivated CeO<sub>2</sub> Bilayer Gate Dielectrics
Leini Wang(Anhui University), Yongchun Zhang(Jiangsu Province Special Equipment Safety Supervision and Inspection Institute), Wenhao Wang(Indiana University Bloomington), Xiaoyu Wu(Anhui University), Bo He(Zhejiang Sci-Tech University), Xiaofen Xu(Anhui University), Gang He(Anhui University of Science and Technology)
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