High-Performance Thin-Film Transistors and Inverters Based on ALD-Derived Ultrathin Al<sub>2</sub>O<sub>3</sub>-Passivated CeO<sub>2</sub> Bilayer Gate Dielectrics
Leini Wang(Anhui University), Yongchun Zhang(Anhui University), Wenhao Wang(Indiana University Bloomington), Xiaoyu Wu(Anhui University), Bo He(Beijing Institute of Technology), Xiaofen Xu(Anhui University), Gang He(Anhui University of Science and Technology)
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