Triboelectric potential tuned dual-gate IGZO transistor for versatile sensory device
Feixia Tan(Chinese Academy of Sciences), Zhong Lin Wang(Beijing Institute of Nanoenergy and Nanosystems), Yonghai Li(Guangxi University), Jia Sun(Central South University), Xiaoyin Xie(Hubei Polytechnic University), Yao Xiong(Chinese Academy of Sciences), Yichen Wei(Guangxi University), Jinran Yu(Chinese Academy of Sciences), Yifei Wang(Nanjing University of Posts and Telecommunications), Qijun Sun(Northeast Forestry University)
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