Cryogenic HfO<i>ₓ</i>-Based Resistive Memory With a Thermal Enhancement Capping Layer
Zhenqi Hao(Tsinghua University), Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), Bin Gao(Chinese Academy of Sciences), Fangyuan Sun(Chinese Academy of Sciences), Qi Hu(Inston (United States)), Xinyi Li(Institute of Microelectronics), Wenbin Zhang(Peking University), Minghong Xu(Tsinghua University), He Qian(University of Science and Technology of China), Jianshi Tang(Tsinghua University)
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