Low‐Voltage Magnetoelectric Coupling in Fe<sub>0.5</sub>Rh<sub>0.5</sub>/0.68PbMg<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub>‐0.32PbTiO<sub>3</sub> Thin‐Film Heterostructures
Wenbo Zhao(Zhengzhou University), Lane W. Martin(Lawrence Berkeley National Laboratory), Tanay A. Gosavi(Cornell University), David Pesquera(Institut Català de Nanociència i Nanotecnologia), Hai Li(Intel (United States)), Chia‐Ching Lin(Intel (United States)), Dmitri E. Nikonov(Intel (United States)), Ian A. Young(Intel (United States)), Gabriel Velarde(University of California, Berkeley), Jieun Kim(University of California, Berkeley), R. Ramesh(Lawrence Berkeley National Laboratory), Lei Zhang(Shanghai University), Xiaoxi Huang(University of California, Berkeley)
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