Enhancement of Breakdown Voltage in SOI MOSFET Using Buried p-Type Silicon

M Deivakani, Korhan Cengiz(Biruni University), P Anitha(Institute of Engineering), Chandran Venkatesan(Unknown), Priyesh P. Gandhi(Sigma Engineering (Germany)), Sumithra M.G(Unknown), P Jenopaul(Institute of Engineering)
Research Square
June 30, 2021
Cited by 0


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