Oxygen Vacancy Formation Accompanied by Hf Oligomer in Amorphous-HfOx-Bascd RRAM: A First Principles Study
Siyao Yang(Tsinghua University), He Qian(University of Science and Technology of China), Bin Gao(Chinese Academy of Sciences), Jianshi Tang(Tsinghua University), Feng Xu(Tsinghua University), Jiezhi Chen(Shandong University), Qi Hu(Institute of Microelectronics)
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