Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing
Zhonghai Yu(Ministry of Education), Hao Zeng(University at Buffalo, State University of New York), Shengbai Zhang(National Laboratory of the Rockies), Jung‐Hun Seo(University at Buffalo, State University of New York), Sen Yang(Xi'an Jiaotong University), Samyak Dhole(University at Buffalo, State University of New York), Yi‐Yang Sun(Chinese Academy of Sciences), Xiucheng Wei(University at Buffalo, State University of New York), Mengying Bian(University at Buffalo, State University of New York), Q. X. Jia(Konkuk University), Haolei Hui(University at Buffalo, State University of New York), Yixiong Zheng(University at Buffalo, State University of New York)
Cited by 119
Related Papers
Intrinsic<i>n</i>-type versus<i>p</i>-type doping asymmetry and the defect physics of ZnO
|Physical review. B, Condensed matter|2001|1.8k
Defect physics of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CuInSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>chalcopyrite semiconductor
|Physical review. B, Condensed matter|1998|1.4k
Origin of<i>p</i>-type doping difficulty in ZnO: The impurity perspective
|Physical review. B, Condensed matter|2002|1.1k
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
|Physical review. B, Condensed matter|2002|652