Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> Films for Tunnel Junctions

Abstract

Metal-insulator-metal tunnel junctions (MIMTJs) have become a fundamental enabling technology for microelectronics, and obtaining a well controlled, atomically thin, high-quality insulating tunnel barrier is key to their progress. Through experiment and simulations, the authors establish an atomic-layer deposition process to make ultrathin Al${}_{2}$O${}_{3}$ barriers of superior quality to industry-standard AlO${}_{x}$. Their method can improve magnetic tunnel junctions or Josephson junctions, for example, and thus a host of applications.