Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
Qilin Hua(Beijing Institute of Technology), Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), Bin Gao(Chinese Academy of Sciences), Taiping Zhang(Tsinghua University), Weiguo Hu(Hua Yuan Group (China)), Guoyun Gao(Chinese Academy of Sciences), Junlu Sun(Chinese Academy of Sciences), Weijun Cheng(Tsinghua University), Zhong Lin Wang(Beijing Institute of Nanoenergy and Nanosystems), He Qian(University of Science and Technology of China), Chunsheng Jiang(Institute of Microelectronics), Jinran Yu(Chinese Academy of Sciences), Renrong Liang(Institute of Microelectronics), Qijun Sun(Northeast Forestry University)
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