Structural characteristics of α-Ga2O3 films grown on sapphire by halide vapor phase epitaxy

Soo Hyeon Kim(Chungnam National University), Moonsang Lee(Institute for Basic Science), Un Jeong Kim(Samsung (South Korea)), Hyun Uk Lee(Korea Institute of Nuclear Safety), Mino Yang(Korea Basic Science Institute), Haeyong Lee(Korea Basic Science Institute), Jong‐Soon Choi(Chungnam National University)
Materials Science in Semiconductor Processing
November 6, 2020
Cited by 12


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