Surface-induced linear magnetoresistance in the antiferromagnetic topological insulator <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mn</mml:mi><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>

Hongtao He(Southern University of Science and Technology), P. B. Chen(Southern University of Science and Technology), Zhanyang Hao(Southern University of Science and Technology), Y. Q. Wang(Southern University of Science and Technology), Jia‐Wei Mei, Fei Ye(Southern University of Science and Technology), Liu Wang(The University of Texas at Austin), X. Z.(Southern University of Science and Technology), Liang Zhou(Southern University of Science and Technology), Jiannong Wang(Hong Kong University of Science and Technology), Boxi Ye(Hong Kong University of Science and Technology), Chen Ma(North University of China)
Physical review. B./Physical review. B
December 23, 2020
Cited by 20


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