Erratum: “Improved nucleation of AlN on <i>in situ</i> nitrogen doped graphene for GaN quasi-van der Waals epitaxy” [Appl. Phys. Lett. <b>117</b>, 051601 (2020)]
Yang Chen(Chinese Academy of Sciences), Dabing Li(Changchun Institute of Optics, Fine Mechanics and Physics), Xiaojuan Sun(Anyang Normal University), Wei Lü(Dalian University of Technology), Yuping Jia(Chinese Academy of Sciences), Ke Jiang(University of Chinese Academy of Sciences), Jianwei Ben(Shenzhen University), Zhiming Shi(Chinese Academy of Sciences), Shanli Zhang(Chinese Academy of Sciences), Hang Zang(Chinese Academy of Sciences)
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