Origin of high quantum efficiency in Si-based homoepitaxial InGaN/GaN light-emitting diodes

Moonsang Lee(Institute for Basic Science), Jaekyun Kim(Hanyang University), Youngwook Shin(Hanyang University), Myung Gwan Hahm(Inha University), Hyun Uk Lee(Korea Institute of Nuclear Safety), Yesul Jeong(The Catholic University of Korea St. Vincent's Hospital)
Journal of Physics D Applied Physics
May 14, 2020
Cited by 2


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