Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In2O3−<i>x</i>
Julia E. Medvedeva(Missouri University of Science and Technology), R. P. H. Chang(Yuan Ze University), И. А. Журавлев(Missouri University of Science and Technology), C. Burris(Missouri University of Science and Technology), M. Grayson(Northwestern University), D. Bruce Buchholz(Northwestern University)
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