Effects of Total-Ionizing-Dose Irradiation on Single-Event Burnout for Commercial Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors*
Siyuan Chen(Peking University), Qi Guo(Chinese Academy of Sciences), Chengfa He(Chinese Academy of Sciences), Xin Wang(Chinese Academy of Sciences), Xin Yu(Chinese Academy of Sciences), Shuai Yao(University of Chinese Academy of Sciences), Libin Wang(Southern Medical University), Xiaolong Li(Chinese Academy of Sciences), Mohan Liu(Chinese Academy of Sciences), Jing Sun(Chinese Academy of Sciences), Wu Lu(Chinese Academy of Sciences), Shanxue Xi(University of Chinese Academy of Sciences)
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