Observation of a three-dimensional fractional Hall response in HfTe5
Stanisław Gałeski, Johannes Gooth, T. Foorster, Tobias Meng(Complexity and Topology in Quantum Matter), R. Wawrzynnczak, Toni Ehmcke, Αναστάσιος Μάρκου(Max Planck Institute for Chemical Physics of Solids), G. F. Chen, Wenguang Zhu(University of Science and Technology of China), J. Wosnitza(Helmholtz-Zentrum Dresden-Rossendorf), Claudia Felser(Max Planck Institute for Chemical Physics of Solids), S. Honnali, Xingjun Zhao(Northeast Normal University), Neetu Lamba
arXiv (Cornell University)
March 16, 2020
Cited by 2
Related Papers
Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials
|Nature Communications|2017|1.4k
Magnetic Weyl semimetal phase in a Kagomé crystal
|Science|2019|841
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In<sub>2</sub>Se<sub>3</sub>
|Nano Letters|2018|821
Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
|Nature Physics|2013|639
Highly Efficient and Exceptionally Durable CO<sub>2</sub> Photoreduction to Methanol over Freestanding Defective Single-Unit-Cell Bismuth Vanadate Layers
|Journal of the American Chemical Society|2017|633