Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications
Linfeng Sun(Beijing Institute of Technology), Heejun Yang(Sungkyunkwan University), Jinbao Jiang(Institute for Basic Science), Takashi Taniguchi(National Institute for Materials Science), Kenji Watanabe(National Institute for Materials Science), Mali Zhao(Sungkyunkwan University), Shoujun Zheng(Beijing Institute of Technology), Yishu Zhang(Singapore University of Technology and Design), Wooseon Choi(Sungkyunkwan University), Gyeongtak Han(Sungkyunkwan University), Young‐Min Kim(Hannam University), Rong Zhao(Tsinghua University), Genuwoo Hwang(Sungkyunkwan University)
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