Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B <sub>4</sub> C thin film
Wataru Norimatsu(Nagoya University), Michiko Kusunoki(Nagoya University), Akira Endo(The University of Tokyo), Koji Oda(Tokyo Metropolitan University), Ryoji Funahashi(National Institute of Advanced Industrial Science and Technology), Atsushi Masumori(Nagoya University), Nao Takata(Nagoya University), Takahiro Ito(Nagoya University), Tomo‐o Terasawa(Japan Atomic Energy Agency), Keita Ito(Eindhoven University of Technology), K. Matsuda(Nagoya University)
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