Effect of thickness-dependent structural defects on electrical stability of MoS2 thin film transistors
Ji-In Park(Korea Basic Science Institute), Yesul Jeong(The Catholic University of Korea St. Vincent's Hospital), Jang‐Hee Yoon(Korea Basic Science Institute), Yujin Jang(Korea Basic Science Institute), Jongpil Kim(Korea Basic Science Institute), Hyun Uk Lee(Korea Institute of Nuclear Safety), Jong‐Seong Bae(Korea Basic Science Institute), Yutaka Wakayama(National Institute for Materials Science)
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