First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

Moonsang Lee(Institute for Basic Science), Sung Soo Park(National Institute on Aging), Thi Kim Oanh Vu(Hanyang University), Hyun Uk Lee(Korea Institute of Nuclear Safety), Chang Wan Ahn(Dongbu HiTek (South Korea)), Eun Kyu Kim(Hanyang University)
Scientific Reports
May 9, 2019
Cited by 12


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