A Ferrite Synaptic Transistor with Topotactic Transformation

Chen Ge(Chinese Academy of Sciences), Chang‐Xiang Liu(Chinese Academy of Sciences), Qingli Zhou(Capital Normal University), Qinghua Zhang(Chinese Academy of Sciences), Jianyu Du(Chinese Academy of Sciences), Jian‐kun Li(Chinese Academy of Sciences), Can Wang(Chinese Academy of Sciences), Lin Gu(Chinese Academy of Sciences), Guozhen Yang(Chinese Academy of Sciences), Kuijuan Jin(Chinese Academy of Sciences)
Advanced Materials
March 29, 2019
Cited by 169

Abstract

Abstract Hardware implementation of artificial synaptic devices that emulate the functions of biological synapses is inspired by the biological neuromorphic system and has drawn considerable interest. Here, a three‐terminal ferrite synaptic device based on a topotactic phase transition between crystalline phases is presented. The electrolyte‐gating‐controlled topotactic phase transformation between brownmillerite SrFeO 2.5 and perovskite SrFeO 3− δ is confirmed from the examination of the crystal and electronic structure. A synaptic transistor with electrolyte‐gated ferrite films by harnessing gate‐controllable multilevel conduction states, which originate from many distinct oxygen‐deficient perovskite structures of SrFeO x induced by topotactic phase transformation, is successfully constructed. This three‐terminal artificial synapse can mimic important synaptic functions, such as synaptic plasticity and spike‐timing‐dependent plasticity. Simulations of a neural network consisting of ferrite synaptic transistors indicate that the system offers high classification accuracy. These results provide insight into the potential application of advanced topotactic phase transformation materials for designing artificial synapses with high performance.


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