A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
Qilin Hua(Beijing Institute of Technology), He Qian(University of Science and Technology of China), Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), Meiran Zhao(Institute of Microelectronics), Bin Gao(Chinese Academy of Sciences), Xianghui Hou(Northwestern Polytechnical University), Xinyi Li(Institute of Microelectronics), Yujia Li(Institute of Microelectronics), Peng Zhou(Shenyang Jianzhu University), Meng‐Fan Chang(Taiwan Semiconductor Manufacturing Company (Taiwan))
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